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BUK752R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 -- 26 January 2009 Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175C rating
1.3 Applications
12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation applications
1.4 Quick reference data
Table 1. VDS ID Ptot QGD Quick reference Conditions Tj 25 C; Tj 175 C VGS = 10 V; Tmb = 25 C; see Figure 1; see Figure 3; Tmb = 25 C; see Figure 2 VGS = 10 V; ID = 25 A; VDS = 32 V; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12; see Figure 13 ID = 100 A; Vsup 40 V; RGS = 50 ; VGS = 10 V; Tj(init) = 25 C; unclamped Min [1] [2] Typ 67 Max 40 100 333 Unit V A W nC drain-source voltage drain current total power dissipation gate-drain charge Symbol Parameter
Dynamic characteristics
Static characteristics RDSon drain-source on-state resistance 1.96 2.3 m
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
[1] [2]
-
-
1.2
J
Refer to document 9397 750 12572 for further information. Continuous current is limited by package.
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
123
SOT78A (3-lead TO-220AB; SC-46; SFM3)
3. Ordering information
Table 3. Ordering information Type number Package Name Description Version BUK752R3-40C 3-lead plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A TO-220AB; TO-220AB SC-46; SFM3
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
2 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 100 C; VGS = 10 V; see Figure 1; Tmb = 25 C; VGS = 10 V; see Figure 1; see Figure 3; IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 C; Tmb = 25 C; tp 10 s; pulsed; Tmb = 25 C Avalanche ruggedness non-repetitive ID = 100 A; Vsup 40 V; RGS = 50 ; VGS = 10 V; drain-source avalanche Tj(init) = 25 C; unclamped energy repetitive drain-source avalanche energy
[1] [2] [3] [4] [5] [6] [7]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj 25 C; Tj 175 C RGS = 20 k [1][2] [1][2] [1][3] Min -20 -55 -55 [1][3] [1][2] Max 40 40 20 100 100 276 1104 333 175 175 276 100 1104 1.2 Unit V V V A A A A W C C A A A J
Tmb = 25 C; tp 10 s; pulsed; see Figure 3 Tmb = 25 C; see Figure 2
Source-drain diode
EDS(AL)R
see Figure 4;
[4][5] [6][7]
-
-
J
Refer to document 9397 750 12572 for further information. Continuous current is limited by package. Current is limited by chip power dissipation rating. Maximum value not quoted. Repetitive rating defined in avalanche rating figure. Single-pulse avalanche rating limited by maximum junction temperature of 175 C. Repetitive avalanche rating limited by an average junction temperature of 170 C. Refer to application note AN10273 for further information.
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
3 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
300 ID (A) 200
003aab004
120 Pder (%) 80
03aa16
100
(1)
40
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aab028
104 ID (A) 103 limit RDSon = VDS/ID = 10 s 100 s
(1)
102
DC 10 1 ms 1 10 ms 100 ms
10-1 10-1
1
10 VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
4 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
103 IAL (A) 102
(1)
003aab013
(2)
10
(3)
1 10-3
10-2
10-1
1
tAL (ms)
10
Fig 4.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
5 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 0.45 Unit K/W thermal resistance from see Figure 5 junction to mounting base thermal resistance from Vertical in free air junction to ambient
Rth(j-a)
-
60
-
K/W
1 Zth(j-mb) (K/W) = 0.5 10-1 0.2 0.1 0.05 0.02 10-2
P
003aab020
=
tp T
single shot
tp t T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
6 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) VGSth Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage gate-source threshold voltage Conditions ID = 250 A; VGS = 0 V; Tj = 25 C ID = 250 A; VGS = 0 V; Tj = -55 C ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 10; see Figure 11 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 10; see Figure 11 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10; see Figure 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 40 V; VGS = 0 V; Tj = 25 C VDS = 0 V; VGS = 20 V; Tj = 25 C VDS = 0 V; VGS = -20 V; Tj = 25 C VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12; see Figure 13 IDSS QG(tot) QGS QGD VGS(pl) Ciss Coss Crss td(on) tr td(off) tf LD drain leakage current total gate charge gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to centre of die from contact screw on mounting base to centre of die LS internal source inductance source-drain voltage reverse recovery time recovered charge from source lead to source bonding pad VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 ID = 25 A; VDS = 32 V; see Figure 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 16 VDS = 40 V; VGS = 0 V; Tj = 175 C ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 15 Dynamic characteristics 175 49 67 5 8492 1606 1101 65 133 146 119 4.5 3.5 7.5 11323 1927 1508 nC nC nC V pF pF pF ns ns ns ns nH nH nH Min 40 36 2 1 Typ 3 0.02 2 2 1.96 Max 4 4.4 1 100 100 4.26 2.3 500 Unit V V V V V A nA nA m m A
Static characteristics
Source-drain diode VSD trr Qr
BUK752R3-40C_3
IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 14 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V
-
0.85 75 57
1.2 -
V ns nC
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
7 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
300 ID
(A)
003aab005
6 RDSon (m) 5
003aab007
20 10 7 6.5
VGS (V) = 6
VGS (V) = 5.5 6.5
200 4 5.5 3 100 5 2
7 8 10 20
4.5 0 0 2 4 6 8 10 VDS (V) 1 0 100 200 ID (A) 300
Fig 6.
Output characteristics: drain current as a function of drain-source voltage; typical values
003aab008
Fig 7.
Drain-source on-state resistance as a function of drain current; typical values
003aab010
180 gfs (S) 120
400 ID (A) 300
200
60 100 Tj = 175 C 0 0 20 40 60 ID (A) 80 0 0 1 3 4 6 VGS (V) 7 Tj = 25 C
Fig 8.
Forward transconductance as a function of drain current; typical values
Fig 9.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
8 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2 min typ max
03aa35
3
typ
10-3
2
min
10-4
1
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 2 4 VGS (V) 6
Fig 10. Gate-source threshold voltage as a function of junction temperature
4 RDSon (m) 3
003aab006
Fig 11. Sub-threshold drain current as a function of gate-source voltage
2 a 1.5
03aa27
1
2
0.5
1 5 10 15 VGS (V) 20
0 -60
0
60
120
Tj (C)
180
Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
9 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
200 IS (A) 150
003aab012
10 VGS (V) 8 VDD = 14 V 6
003aab011
VDD = 32 V
100 4 Tj = 175 C 50 2 Tj = 25 C
0 0.0
0 0.5 1.0 1.5 VSD (V) 2.0 0 50 100 150 QG (nC) 200
Fig 14. Source current as a function of source-drain voltage; typical values
14000 C (pF) 10500 Coss Ciss
Fig 15. Gate-source voltage as a function of gate charge; typical values
003aab009
7000 Crss
3500
0 10-2
10-1
1
10 VDS (V)
102
Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
10 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A
E p
A A1 q
D1
mounting base
D
L1(1)
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.6 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 03-01-22 05-03-14
Fig 17. Package outline SOT78A (3-lead TO-220AB; SC-46; SFM3)
BUK752R3-40C_3 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
11 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history Release date 20090126 Data sheet status Product data sheet Change notice Supersedes BUK75_7E2R3-40C_2 Document ID BUK752R3-40C_3 Modifications:
* * * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK752R3-40C separated from data sheet BUK75_7E2R3-40C_2. Package outline updated. Product data sheet Product data sheet BUK75_7E2R3-40C_1 -
BUK75_7E2R3-40C_2 BUK75_7E2R3-40C_1
20060810 20060503
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
12 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK752R3-40C_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 26 January 2009
13 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 January 2009 Document identifier: BUK752R3-40C_3

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